Check out our new work in Nature Electronics, where we demonstrate electrical control of antiferromagnetic order in a CMOS-compatible metallic antiferromagnet, using very low current density:


The technology may enable highly scaled, secure, and ultrafast MRAM based on antiferromagnetic materials, for AI and high-performance computing applications.

In collaboration with Pedram Khalili Amiri and Matthew Grayson. Kudos to the team: Jiacheng Shi, Victor Lopez-Dominguez, Hamid Almasi, Francesca Garesci, Chulin Wang.